Thursday, October 23, 2025

4:00 pm-5:00 pm

CINT Thin Film Capabilities Towards Microelectronics

In this talk, I will give you an overview of CINT’s thin film capabilities and how we used our capabilities to develop new materials. In ferroelectric and dielectric materials, we developed strategies of designing interface and domain structure in doped BaTiO3 to achieve enhanced relaxor ferroelectric behavior for energy storage applications. I will discuss the design of (Ba0.7Ca0.3)TiO3 (BCT) and Ba(Ti0.8Zr0.2)O3 (BZT) superlattices via a high-throughput combinatorial approach. I will also discuss strategies to further optimize domain structures and suppress the leakage current in BZT-BCT films via a machine learning approach. When it comes to electronic devices, we have investigated some of these oxide films for resistive switching and neuromorphic computing. Interface, defect and polarization play critical roles on controlling switching behavior in ferroelectric and dielectric thin films.

Short Bio for the speaker:

Aiping Chen is a scientist at the Center for Integrated Nanotechnologies (CINT) at Los Alamos National Laboratory (LANL). CINT is a DOE, Office of Science, funded user facility operated jointly by Los Alamos National Laboratory and Sandia National Laboratories. After receiving his Ph.D. degree in 2013 from Texas A&M University, Chen worked at LANL as a Director’s Postdoctoral Fellow. Since 2016, he has been leading the thin film and device team in CINT and working with CINT users on emergent phenomena in quantum materials and electronic devices. He received the LANL Early Career Award in 2017 and the Nanomaterials Young Investigator Award in 2022. He currently serves as the secretary for the Electronics Division of the American Ceramic Society.